CONTACT STRUCTURES FOR INTEGRATED CIRCUIT PRODUCTS

One illustrative transistor device disclosed herein includes a gate structure positioned above at least an active region, wherein the gate structure has an axial length in a direction corresponding to a gate width direction of the transistor device. In this example, a first portion of the axial leng...

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Bibliographic Details
Main Authors Basker, Veeraraghavan, Liebmann, Lars W, Xie, Ruilong, Pranatharthi Haran, Balasubramanian
Format Patent
LanguageEnglish
Published 16.01.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:One illustrative transistor device disclosed herein includes a gate structure positioned above at least an active region, wherein the gate structure has an axial length in a direction corresponding to a gate width direction of the transistor device. In this example, a first portion of the axial length of the gate structure has a first upper surface and a second portion of the axial length of the gate structure has a second upper surface, wherein the first upper surface is positioned at a level that is above a level of the second upper surface. The device also includes a gate contact structure that contacts the first upper surface of the gate structure.
Bibliography:Application Number: US201916579035