MANUFACTURING METHOD FOR SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE

• Main Author: OHNO, Akihito
• Format: Patent
• Language: English
• Published: 16.01.2020
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A silicon carbide substrate (2) is positioned such that a principal surface of the silicon carbide substrate (2) is parallel to a plurality of injection holes (8) of a horizontal CVD apparatus arranged in a row. Source gas is fed from the plurality of injection holes (8) to epitaxially grow a silicon carbide epitaxial growth layer (10) on the principal surface of the silicon carbide substrate (2). The source gas fed from the plurality of injection holes (8) is divided into a plurality of system lines and controlled individually by separate mass flow controllers. A flow rate of the source gas on the principal surface of the silicon carbide substrate (2) is greater than 1 m/sec.