COMPOUND SEMICONDUCTOR MONOLITHIC INTEGRATED CIRCUIT DEVICE WITH TRANSISTORS AND DIODES

• Main Authors: LIU, Sheng-Hsien, LIN, Hsi-Tsung, LIN, Yan-Cheng
• Format: Patent
• Language: English
• Published: 09.01.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A compound semiconductor monolithically integrated circuit device with transistors and diodes comprises a compound semiconductor substrate, a transistor epitaxial structure, a transistor upper structure, a first diode, and a second diode. The transistor epitaxial structure forms on the compound semiconductor substrate. The first diode, the second diode, and the transistor upper structure form on a first part, a second part, and a third part of the transistor epitaxial structure, respectively. The transistor upper structure and the third part of the transistor epitaxial structure form a transistor. The first diode comprises a first part of an n-type doped epitaxial layer, a first part of a first intrinsic epitaxial layer, a first electrode, and a second electrode. The second diode comprises a second part of the n-type doped epitaxial layer, a second part of the first intrinsic epitaxial layer, a first electrode, and a second electrode.