MULTI-BIT CELL READ-OUT TECHNIQUES FOR MRAM CELLS WITH MIXED PINNED MAGNETIZATION ORIENTATIONS

Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive...

Full description

Saved in:
Bibliographic Details
Main Authors BOZDAG, Kadriye Deniz, GAJEK, Marcin, TZOUFRAS, Michail
Format Patent
LanguageEnglish
Published 09.01.2020
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive programming parameter values can be selected to switch the state of a corresponding one of N cell elements of the MBC. Successive ones of the sensed state parameter values can be compared to determine N state change results, which can be used to determine the read state of the MBC.
Bibliography:Application Number: US201816122745