SYSTEMS FOR PRODUCING A MONOCRYSTALLINE INGOT THAT INVOLVE MONITORING NECK GROWTH MOVING AVERAGE
Methods for producing monocrystalline silicon ingots in which the pull rate during neck growth is monitored are disclosed. A moving average of the pull rate may be calculated and compared to a target moving average to determine if dislocations were not eliminated and the neck is not suitable for pro...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
02.01.2020
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Subjects | |
Online Access | Get full text |
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Summary: | Methods for producing monocrystalline silicon ingots in which the pull rate during neck growth is monitored are disclosed. A moving average of the pull rate may be calculated and compared to a target moving average to determine if dislocations were not eliminated and the neck is not suitable for producing an ingot main body suspended from the neck. |
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Bibliography: | Application Number: US201816021962 |