SYSTEMS FOR PRODUCING A MONOCRYSTALLINE INGOT THAT INVOLVE MONITORING NECK GROWTH MOVING AVERAGE

Methods for producing monocrystalline silicon ingots in which the pull rate during neck growth is monitored are disclosed. A moving average of the pull rate may be calculated and compared to a target moving average to determine if dislocations were not eliminated and the neck is not suitable for pro...

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Bibliographic Details
Main Authors Wu, Chun-Sheng, Tseng, Hsien-Ta, Chen, Chi-Yung, Lu, Zheng, Tsai, Feng-Chien, Sheu, Yeong-Ming
Format Patent
LanguageEnglish
Published 02.01.2020
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Summary:Methods for producing monocrystalline silicon ingots in which the pull rate during neck growth is monitored are disclosed. A moving average of the pull rate may be calculated and compared to a target moving average to determine if dislocations were not eliminated and the neck is not suitable for producing an ingot main body suspended from the neck.
Bibliography:Application Number: US201816021962