DIELECTRIC ISOLATION LAYER BETWEEN A NANOWIRE TRANSISTOR AND A SUBSTRATE

• Main Authors: Guler, Leonard, Kang, Jun Sung, Beattie, Bruce E, Guha, Biswajeet, Hsu, William
• Format: Patent
• Language: English
• Published: 26.12.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Gate all around semiconductor devices, such as nanowire or nanoribbon devices, are described that include a low dielectric constant ("low-κ") material disposed between a first nanowire closest to the substrate and the substrate. This configuration enables gate control over all surfaces of...