GALLIDATION ASSISTED IMPURITY DOPING

In one embodiment, a product includes a structure comprising a material of a Group-III-nitride having a dopant, where a concentration of the dopant in the structure has a concentration gradient characteristic of diffusion of the dopant inward from at least a portion of a surface of the structure in...

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Bibliographic Details
Main Authors Dryden, Daniel Max, Frye, Clint, Voss, Lars, Nikolic, Rebecca J, Shao, Qinghui, Harrison, Sara Elizabeth
Format Patent
LanguageEnglish
Published 26.12.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In one embodiment, a product includes a structure comprising a material of a Group-III-nitride having a dopant, where a concentration of the dopant in the structure has a concentration gradient characteristic of diffusion of the dopant inward from at least a portion of a surface of the structure in a direction substantially normal to the portion of the surface. The structure has less than 1% decomposition of the Group-III-nitride at the surface of the structure.
Bibliography:Application Number: US201916446460