TEMPERATURE CONTROL SYSTEMS AND METHODS FOR REMOVING METAL OXIDE FILMS

A processing method includes: loading, onto a substrate support of a processing chamber, a substrate having a metal oxide film deposited on a surface of the substrate; based on a predetermined temperature, controlling a temperature of coolant provided to coolant channels through the substrate suppor...

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Bibliographic Details
Main Authors Ha, Jeong Seok, Singhal, Akhil N, Van Cleemput, Patrick A
Format Patent
LanguageEnglish
Published 19.12.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A processing method includes: loading, onto a substrate support of a processing chamber, a substrate having a metal oxide film deposited on a surface of the substrate; based on a predetermined temperature, controlling a temperature of coolant provided to coolant channels through the substrate support, where the predetermined temperature is less than 50 degrees Celsius; and, while controlling the temperature of the coolant based on the predetermined temperature, selectively etching the metal oxide film including: flowing molecular hydrogen into the processing chamber; and striking plasma within the processing chamber.
Bibliography:Application Number: US201816012120