FERROELECTRIC STRAIN BASED PHASE-CHANGE DEVICE

A phase transition optical device includes a substrate or a thin film of a ferroelectric material. A transition metal dichalcogenide is disposed over and in contact with the substrate or the thin film. The transition metal dichalcogenide has a semiconducting state with a first optical property and a...

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Bibliographic Details
Main Authors Azizimanesh, Ahmad, Hou, Wenhui, Sewaket, Arfan, Wu, Stephen M
Format Patent
LanguageEnglish
Published 12.12.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A phase transition optical device includes a substrate or a thin film of a ferroelectric material. A transition metal dichalcogenide is disposed over and in contact with the substrate or the thin film. The transition metal dichalcogenide has a semiconducting state with a first optical property and a semimetallic state with a second optical property. The semiconducting state or the semimetal state is selectable by applying a voltage across the ferroelectric material to induce a strain in the transition metal dichalcogenide via the ferroelectric material. A transistor device, integrated memory device, and a phase transition optical device are also described.
Bibliography:Application Number: US201916433534