SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

A semiconductor device includes a semiconductor substrate, a gate dielectric, a gate electrode and a pair of source/drain regions. The gate dielectric is disposed in the semiconductor substrate having a concave profile that defines an upper boundary lower than an upper surface of the semiconductor s...

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Main Authors CHU, CHEN-LIANG, YAO, CHIH-WEN, LEI, MING-TA, KUNG, TA-YUAN, LIU, RUEY-HSIN
Format Patent
LanguageEnglish
Published 28.11.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a semiconductor substrate, a gate dielectric, a gate electrode and a pair of source/drain regions. The gate dielectric is disposed in the semiconductor substrate having a concave profile that defines an upper boundary lower than an upper surface of the semiconductor substrate. The gate electrode is disposed over the gate dielectric. The pair of source/drain regions are disposed on opposing sides of the gate dielectric.
Bibliography:Application Number: US201815987318