SEMICONDUCTOR STACKED BODY AND LIGHT-RECEIVING DEVICE

• Main Authors: FUYUKI, Takuma, GO, Takashi, ISHIZUKA, Takashi
• Format: Patent
• Language: English
• Published: 21.11.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor stacked body includes a base layer containing a III-V group compound semiconductor, a light-receiving layer containing a III-V group compound semiconductor, a control layer containing a III-V group compound semiconductor and disposed in contact with the light-receiving layer, a diffusion blocking layer containing a III-V group compound semiconductor and a p-type impurity that generates a p-type carrier, the diffusion blocking layer having a p-type impurity concentration of 1×1016 cm−3 or less, and a contact layer containing a III-V group compound semiconductor and having p-type conductivity. These layers are stacked in this order. The concentration of an element in the control layer, the element being identical to a group V element contained in the light-receiving layer, is lower on a main surface of the control layer adjacent to the diffusion blocking layer than on a main surface of the control layer adjacent to the light-receiving layer.