MEMORY CELL ARRAY CIRCUIT AND METHOD OF FORMING THE SAME

A memory cell array includes a first column of memory cells, a second column of memory cells, a first bit line, a second bit line and a source line. The second column of memory cells is separated from the first column of memory cells in a first direction. The first column of memory cells and the sec...

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Bibliographic Details
Main Authors CHIH, Yu-Der, WENG, Chi-Hsiang
Format Patent
LanguageEnglish
Published 21.11.2019
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A memory cell array includes a first column of memory cells, a second column of memory cells, a first bit line, a second bit line and a source line. The second column of memory cells is separated from the first column of memory cells in a first direction. The first column of memory cells and the second column of memory cells are arranged in a second direction. The first bit line is coupled to the first column of memory cells, and extends in the second direction. The second bit line is coupled to the second column of memory cells, and extends in the second direction. The source line extends in the second direction, is coupled to the first column of memory cells and the second column of memory cells.
Bibliography:Application Number: US201916401486