RESISTIVE SWITCHING MEMORY

Non-volatile Resistive RAM devices are described prepared using various nanocube dispersions and dispersion based deposition techniques including ink jet printing. Stretchable Resistive RAM devices are described that retain their switching properties after repeated stretch and relaxation cycles and...

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Bibliographic Details
Main Authors Murphy, Charles, Li, Sean Suixiang, White, Nicholas John, Chu, Dewei
Format Patent
LanguageEnglish
Published 07.11.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Non-volatile Resistive RAM devices are described prepared using various nanocube dispersions and dispersion based deposition techniques including ink jet printing. Stretchable Resistive RAM devices are described that retain their switching properties after repeated stretch and relaxation cycles and show highly stable ON/OFF ratios after each cycle in the stretched and relaxed state.
Bibliography:Application Number: US201716466699