FABRICATION OF PERFECTLY SYMMETRIC GATE-ALL-AROUND FET ON SUSPENDED NANOWIRE USING INTERFACE INTERACTION
A semiconductor device including a plurality of suspended nanowires and a gate structure present on a channel region portion of the plurality of suspended nanowires. The gate structure has a uniform length extending from an upper surface of the gate structure to the base of the gate structure. The s...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
07.11.2019
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor device including a plurality of suspended nanowires and a gate structure present on a channel region portion of the plurality of suspended nanowires. The gate structure has a uniform length extending from an upper surface of the gate structure to the base of the gate structure. The semiconductor device further includes a dielectric spacer having a uniform composition in direct contact with the gate structure. Source and drain regions are present on source and drain region portions of the plurality of suspended nanowires. |
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Bibliography: | Application Number: US201916511716 |