MULTIVALENT OXIDE CAP FOR MULTIPLE WORK FUNCTION GATE STACKS ON HIGH MOBILITY CHANNEL MATERIALS

A method of fabricating a semiconductor device includes providing a high-k dielectric layer arranged on a channel region including a first transistor area and a second transistor area. The method further includes depositing a multivalent oxide layer directly on the high-k dielectric layer of the fir...

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Bibliographic Details
Main Authors LEE, CHOONGHYUN, HASHEMI, POUYA, ZHANG, JINGYUN, ANDO, TAKASHI
Format Patent
LanguageEnglish
Published 07.11.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a semiconductor device includes providing a high-k dielectric layer arranged on a channel region including a first transistor area and a second transistor area. The method further includes depositing a multivalent oxide layer directly on the high-k dielectric layer of the first transistor area. The method includes depositing a first work function metal on the multivalent oxide layer of the first transistor area and directly on the high-k dielectric layer of the second transistor area.
Bibliography:Application Number: US201815969252