MULTIVALENT OXIDE CAP FOR MULTIPLE WORK FUNCTION GATE STACKS ON HIGH MOBILITY CHANNEL MATERIALS
A method of fabricating a semiconductor device includes providing a high-k dielectric layer arranged on a channel region including a first transistor area and a second transistor area. The method further includes depositing a multivalent oxide layer directly on the high-k dielectric layer of the fir...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
07.11.2019
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Subjects | |
Online Access | Get full text |
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Summary: | A method of fabricating a semiconductor device includes providing a high-k dielectric layer arranged on a channel region including a first transistor area and a second transistor area. The method further includes depositing a multivalent oxide layer directly on the high-k dielectric layer of the first transistor area. The method includes depositing a first work function metal on the multivalent oxide layer of the first transistor area and directly on the high-k dielectric layer of the second transistor area. |
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Bibliography: | Application Number: US201815969252 |