Semiconductor Device Having a Bidirectional Switch and Discharge Circuit
A semiconductor device includes a main bi-directional switch formed on a semiconductor substrate and having first and second gates, a first source electrically connected to a first voltage terminal, a second source electrically connected to a second voltage terminal, and a common drain. The semicond...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
24.10.2019
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor device includes a main bi-directional switch formed on a semiconductor substrate and having first and second gates, a first source electrically connected to a first voltage terminal, a second source electrically connected to a second voltage terminal, and a common drain. The semiconductor device further includes a discharge circuit having a plurality of individual transistors or an auxiliary bi-directional switch monolithically integrated with the main bi-directional switch and connected in a common source configuration to the semiconductor substrate. The plurality of individual transistors or the auxiliary bi-directional switch includes a first drain connected to the first source of the main bi-directional switch, a second drain connected to the second source of the main bi-directional switch, and first and second gates each decoupled from gate drive circuitry so that the first and the second gates are controlled at least passively and based on a state of the main bi-directional switch. |
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Bibliography: | Application Number: US201815960175 |