NANO MEMORY DEVICE

A non-volatile memory circuit in embodiments of the present invention may have one or more of the following features: (a) a logic source, and (b) a semi-conductive device being electrically coupled to the logic source, having a first terminal, a second terminal and a nano-grease with significantly r...

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Bibliographic Details
Main Authors Tolle, Charles, Yang, Jack, Hong, Haiping, Christensen, Greg, Widener, Christian
Format Patent
LanguageEnglish
Published 17.10.2019
Subjects
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FUELS
LUBRICANTS
LUBRICATING COMPOSITIONS
METALLURGY
PEAT
PETROLEUM, GAS OR COKE INDUSTRIES
SEMICONDUCTOR DEVICES
TECHNICAL GASES CONTAINING CARBON MONOXIDE
USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATINGINGREDIENTS IN A LUBRICATING COMPOSITION
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Summary:A non-volatile memory circuit in embodiments of the present invention may have one or more of the following features: (a) a logic source, and (b) a semi-conductive device being electrically coupled to the logic source, having a first terminal, a second terminal and a nano-grease with significantly reduced amount of carbon nanotube loading located between the first and second terminal, wherein the nano-grease exhibits non-volatile memory characteristics.
Bibliography:Application Number: US201916381641