SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

According to one embodiment, a semiconductor memory device includes a first conductive member, a first semiconductor member, and a first stacked member provided between the first conductive member and the first semiconductor member. The first stacked member includes a first insulating film, a second...

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Bibliographic Details
Main Authors KAMIMUTA, Yuuichi, SUKO, Ayaka, TAKASHIMA, Akira, INO, Tsunehiro
Format Patent
LanguageEnglish
Published 17.10.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to one embodiment, a semiconductor memory device includes a first conductive member, a first semiconductor member, and a first stacked member provided between the first conductive member and the first semiconductor member. The first stacked member includes a first insulating film, a second insulating film provided between the first insulating film and the first semiconductor member, first and second layers. The first layer includes aluminum and nitrogen and is provided between the first and second insulating films. A first thickness of the first layer along a first direction is 3 nm or less. The first direction is from the first semiconductor member toward the first conductive member. The second layer contacts the first layer, includes silicon and nitrogen, and is provided at one of a position between the first layer and the second insulating film or a position between the first layer and the first insulating film.
Bibliography:Application Number: US201916299727