SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

A method for fabricating semiconductor device includes the steps of: forming a titanium nitride (TiN) layer on a silicon layer; performing a first treatment process by reacting the TiN layer with dichlorosilane (DCS) to form a titanium silicon nitride (TiSiN) layer; forming a conductive layer on the...

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Main Authors Wu, Chia-Chen, Liu, Chih-Chien, Lin, Ji-Min, Chiu, Chun-Chieh, Chang, Kai-Jiun, Chen, Tzu-Chieh, Chen, Yi-Wei, Huang, Yi-An, Cheng, Tsun-Min, Chen, Pin-Hong, Liu, Tzu-Hao, Tsai, Chih-Chieh, Wu, Po-Chih
Format Patent
LanguageEnglish
Published 17.10.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A method for fabricating semiconductor device includes the steps of: forming a titanium nitride (TiN) layer on a silicon layer; performing a first treatment process by reacting the TiN layer with dichlorosilane (DCS) to form a titanium silicon nitride (TiSiN) layer; forming a conductive layer on the TiSiN layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.
Bibliography:Application Number: US201815986797