METHOD AND APPARATUS FOR REDUCING PARTICLE DEFECTS IN PLASMA ETCH CHAMBERS

In-situ low pressure chamber cleans and gas nozzle apparatus for plasma processing systems employing in-situ deposited chamber coatings. Certain chamber clean embodiments for conductor etch applications include an NF3-based plasma clean performed at pressures below 30 mT to remove in-situ deposited...

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Bibliographic Details
Main Authors Wang, Xikun, Shen, Meihua, Nguyen, Andrew, He, Xiaoming, Lee, Changhun
Format Patent
LanguageEnglish
Published 26.09.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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Summary:In-situ low pressure chamber cleans and gas nozzle apparatus for plasma processing systems employing in-situ deposited chamber coatings. Certain chamber clean embodiments for conductor etch applications include an NF3-based plasma clean performed at pressures below 30 mT to remove in-situ deposited SiOx coatings from interior surfaces of a gas nozzle hole. Embodiments include a gas nozzle with bottom holes dimensioned sufficiently small to reduce or prevent the in-situ deposited chamber coatings from building up a SiOx deposits on interior surfaces of a nozzle hole.
Bibliography:Application Number: US201916438277