GUIDED INSPECTION OF A SEMICONDUCTOR WAFER BASED ON SPATIAL DENSITY ANALYSIS
Samples at a semiconductor wafer that have been reviewed by a review tool may be identified. Furthermore, a candidate sample at the semiconductor wafer that has not been reviewed by the review tool may be identified. A location of the candidate sample at the semiconductor wafer may and a number of t...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | English |
Published |
26.09.2019
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | Samples at a semiconductor wafer that have been reviewed by a review tool may be identified. Furthermore, a candidate sample at the semiconductor wafer that has not been reviewed by the review tool may be identified. A location of the candidate sample at the semiconductor wafer may and a number of the samples that have been reviewed that are at locations proximate to the location of the candidate sample may be determined. The candidate sample may be selected for review by the review tool based on the number of the plurality of samples that are at locations proximate to the location of the candidate sample. |
---|---|
AbstractList | Samples at a semiconductor wafer that have been reviewed by a review tool may be identified. Furthermore, a candidate sample at the semiconductor wafer that has not been reviewed by the review tool may be identified. A location of the candidate sample at the semiconductor wafer may and a number of the samples that have been reviewed that are at locations proximate to the location of the candidate sample may be determined. The candidate sample may be selected for review by the review tool based on the number of the plurality of samples that are at locations proximate to the location of the candidate sample. |
Author | SOFER, Yotam HIRSZHORN, Ariel |
Author_xml | – fullname: HIRSZHORN, Ariel – fullname: SOFER, Yotam |
BookMark | eNqNyrsKwjAUANAMOvj6hwvOgm1RyHjNQy_UpPSmSKdSJE6SFur_Ywc_wOksZy0WaUhxJcprQ9poIMeVUYG8A28Bgc2dlHe6UcHX8EBrarggz3MeXGEgLEEbxxRaQIdly8RbsXz17ynufm7E3pqgboc4Dl2cxv4ZU_x0DefHTOayOJ0lZsV_6wuTfTCn |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences Physics |
ExternalDocumentID | US2019293569A1 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_US2019293569A13 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 12:58:12 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_US2019293569A13 |
Notes | Application Number: US201815926990 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190926&DB=EPODOC&CC=US&NR=2019293569A1 |
ParticipantIDs | epo_espacenet_US2019293569A1 |
PublicationCentury | 2000 |
PublicationDate | 20190926 |
PublicationDateYYYYMMDD | 2019-09-26 |
PublicationDate_xml | – month: 09 year: 2019 text: 20190926 day: 26 |
PublicationDecade | 2010 |
PublicationYear | 2019 |
RelatedCompanies | Applied Materials Israel Ltd |
RelatedCompanies_xml | – name: Applied Materials Israel Ltd |
Score | 3.2328162 |
Snippet | Samples at a semiconductor wafer that have been reviewed by a review tool may be identified. Furthermore, a candidate sample at the semiconductor wafer that... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | CALCULATING COMPUTING COUNTING IMAGE DATA PROCESSING OR GENERATION, IN GENERAL INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING |
Title | GUIDED INSPECTION OF A SEMICONDUCTOR WAFER BASED ON SPATIAL DENSITY ANALYSIS |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190926&DB=EPODOC&locale=&CC=US&NR=2019293569A1 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEL8Q_HxT1PiBpolmb4uwL9kDMWXdZAa2hW4KT4RtJTExg8iM_763BpQnHnvXNNdLr79ee3cFeEAEsVJT11QjE7mKK6StzuxOSzXzVLON1ixrp1WC8zCw-onxOjbHNfjc5MLIOqE_sjgiWlSG9l7K_Xr5f4nFZGzl6jH9QNLi2Yu7TFl7x4hutmYprNd1o5CFjuI43YQrwUjyUC7Tsin6SnvVQbqqtO--9aq8lOU2qHgnsB_heEV5CjVRNODI2fy91oDD4frJuwEHMkYzWyFxbYerMxi8JD5zGUHXO3JlGAgJPUIJr7QaBixx4nBE3qnnjkiPcuyJPXhEY58OCHMD7scTQgM6mHCfn8O958ZOX0UBp3_6mCZ8ezb6BdSLRSEugbRTSyAdcW-mG3mmd1pCWHND18RTNs9N4wqau0a63s2-geOqWQVLaFYT6uXXt7hFRC7TO6nIX0-giC4 |
link.rule.ids | 230,309,786,891,25594,76903 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEL8Q_MA3RY0fqE00e1uEfcEeiCnrJtOxEbYpPBG2lcTEDCIz_vveGlCeeL27NNdLr7_82rsW4AERxEh0VZG1lGcyrpCWPDM7TVnPEsXUmrO0lZQNzgPf6Mfay1gfV-Bz0wsj3gn9EY8jYkalmO-F2K-X_4dYTNRWrh6TDxQtnpyoy6Q1O0Z0MxVDYr2uPQxYYEmW1Y1DyR8JHfqlGyZFrrTXRlIoyNJbr-xLWW6DinMM-0McLy9OoMLzOtSszd9rdTgcrK-863AgajTTFQrXebg6Be85dpnNCFLvoS3KQEjgEErCMqqBz2IrCkbknTr2iPRoiJZoEQ5p5FKPMNsP3WhCqE-9SeiGZ3Dv2JHVl9HB6V88pnG4PRv1HKr5IucXQFqJwVGOuDdTtSxVO03OjbmmKrydzjNdu4TGrpGudqvvoNaPBt7Uc_3XazgqVWXhhGI0oFp8ffMbROciuRVB_QXSYosY |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=GUIDED+INSPECTION+OF+A+SEMICONDUCTOR+WAFER+BASED+ON+SPATIAL+DENSITY+ANALYSIS&rft.inventor=HIRSZHORN%2C+Ariel&rft.inventor=SOFER%2C+Yotam&rft.date=2019-09-26&rft.externalDBID=A1&rft.externalDocID=US2019293569A1 |