SEMICONDUCTOR DEVICES

Example embodiments relate to a semiconductor device. The semiconductor device includes a substrate including an active region extending in a first direction, a plurality of bit lines running across the active region in a second direction crossing the first direction, a first spacer on a sidewall of...

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Bibliographic Details
Main Authors RHEE, Joonkyu, CHOI, Taeseop, LEE, Chanmi, KIM, Nam-Gun, Lee, Ji-Hye
Format Patent
LanguageEnglish
Published 19.09.2019
Subjects
ELECTRICITY
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Summary:Example embodiments relate to a semiconductor device. The semiconductor device includes a substrate including an active region extending in a first direction, a plurality of bit lines running across the active region in a second direction crossing the first direction, a first spacer on a sidewall of the bit line, and a storage node contact on the active region between adjacent bit lines. The first spacer includes a first part between the storage node contact and the bit line, a second part between the first part and the storage node contact, and a third part between the first and second parts. A minimum vertical thickness of the first part is greater than a maximum vertical thickness of the third part. The maximum vertical thickness of the third part is greater than a maximum vertical thickness of the second part.
Bibliography:Application Number: US201916422054