SEMICONDUCTOR LIGHT RECEIVING DEVICE

A semiconductor light receiving device includes a supporting base having an n-type semiconductor region; and a photodiode structure disposed on the supporting base. The photodiode structure includes a barrier structure enabling an electron barrier, a light absorbing layer including III-V compound se...

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Bibliographic Details
Main Authors BALASEKARAN, Sundararajan, INADA, Hiroshi
Format Patent
LanguageEnglish
Published 12.09.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor light receiving device includes a supporting base having an n-type semiconductor region; and a photodiode structure disposed on the supporting base. The photodiode structure includes a barrier structure enabling an electron barrier, a light absorbing layer including III-V compound semiconductor, and a p-type semiconductor region. The III-V compound semiconductor of the light absorbing layer has a bandgap allowing the light absorbing layer to be sensitive to infrared light. The barrier structure includes a first spacer layer, a first barrier layer, and a second spacer layer, and the p-type semiconductor region, the light absorbing layer, the first spacer layer, the first barrier layer, the second spacer layer, and the n-type semiconductor region are sequentially arranged along a direction of a first axis.
Bibliography:Application Number: US201916293010