Methods Of Forming Metal Chalcogenide Pillars

• Main Authors: Mullick, Amrita B, Gandikota, Srinivas
• Format: Patent
• Language: English
• Published: 12.09.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Methods of producing a self-aligned structure comprising a metal chalcogenide are described. Some methods comprise forming a metal-containing film in a substrate feature and exposing the metal-containing film to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise forming a metal-containing film in a substrate feature, expanding the metal-containing film to form a pillar and exposing the pillar to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise directly forming a metal chalcogenide pillar in a substrate feature to form a self-aligned structure comprising a metal chalcogenide. Methods of forming self-aligned vias are also described.