Film-Forming Method and Film-Forming Apparatus
There is provided a method of forming a predetermined film by alternately supplying a film-forming raw material gas and a reaction gas onto a workpiece by an atomic layer deposition (ALD), the method including: beginning an ALD-based film formation at a first temperature at which an adsorption of th...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
05.09.2019
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Subjects | |
Online Access | Get full text |
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Summary: | There is provided a method of forming a predetermined film by alternately supplying a film-forming raw material gas and a reaction gas onto a workpiece by an atomic layer deposition (ALD), the method including: beginning an ALD-based film formation at a first temperature at which an adsorption of the film-forming raw material gas occurs; continuing the ALD-based film formation while increasing the first temperature; and completing the ALD-based film formation at a second temperature at which a decomposition of the film-forming raw material gas occurs. |
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Bibliography: | Application Number: US201916291243 |