PRODUCTION METHOD OF SEMICONDUCTOR DEVICE

A production method of a semiconductor device includes introducing a reduction gas for reducing metal to a space containing a target to be used as the semiconductor device. The method also includes introducing a material gas and a first gas simultaneously to the space on a basis of a predetermined p...

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Bibliographic Details
Main Authors NATORI, Katsuaki, WAKATSUKI, Satoshi, KITAMURA, Masayuki
Format Patent
LanguageEnglish
Published 22.08.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A production method of a semiconductor device includes introducing a reduction gas for reducing metal to a space containing a target to be used as the semiconductor device. The method also includes introducing a material gas and a first gas simultaneously to the space on a basis of a predetermined partial pressure ratio after introducing the reduction gas, to form a film that contains the metal, on the target. The material gas etches the metal when only the material gas is flowed. The first gas is different from the material gas. The predetermined partial pressure ratio is a ratio of the material gas and the first gas.
Bibliography:Application Number: US201816031544