SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface to...

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Main Authors WU, Jian, WEN, Chi-Yuan, FANG, Chun-Chieh, WU, Ming-Chi, HSUEH, Che-Hsiang, YEH, Yu-Lung, SU, Ching-Chung, LU, Jiech-Fun
Format Patent
LanguageEnglish
Published 15.08.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.
Bibliography:Application Number: US201916394772