MIDDLE OF THE LINE SELF-ALIGNED DIRECT PATTERN CONTACTS

The present disclosure relates to semiconductor structures and, more particularly, to middle of the line self-aligned direct pattern contacts and methods of manufacture. The structures described herein include: at least one gate structure with a metallization and source/drain regions; a source/drain...

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Bibliographic Details
Main Authors XIE, Ruilong, NORTHROP, Gregory A, STEPHENS, Jason E, LIEBMANN, Lars W, CHANEMOUGAME, Daniel
Format Patent
LanguageEnglish
Published 11.07.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present disclosure relates to semiconductor structures and, more particularly, to middle of the line self-aligned direct pattern contacts and methods of manufacture. The structures described herein include: at least one gate structure with a metallization and source/drain regions; a source/drain contact in electrical connection with the source/drain regions, respectively; and a contact structure with a re-entrant profile in electrical connection with the source/drain contact and the metallization of the at least one gate structure, respectively.
Bibliography:Application Number: US201815868479