DENSITY-CONTROLLABLE DUMMY FILL STRATEGY FOR NEAR-MRAM PERIPHERY AND FAR-OUTSIDE-MRAM LOGIC REGIONS FOR EMBEDDED MRAM TECHNOLOGY AND METHOD FOR PRODUCING THE SAME

Methods of forming a MTJ dummy fill gradient across near-active-MRAM-cell periphery and far-outside-MRAM logic regions and the resulting device are provided. Embodiments include providing an embedded MRAIVI layout with near-active-MRAM-cell periphery logic and far-outside-MRAM logic regions; forming...

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Bibliographic Details
Main Authors ZHANG, Liying, YI, Wanbing, SHUM, Danny Pak-Chum, LI, Pinghui, CHAN, Darin, ZHOU, Haiqing, ZHU, Ming
Format Patent
LanguageEnglish
Published 04.07.2019
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Summary:Methods of forming a MTJ dummy fill gradient across near-active-MRAM-cell periphery and far-outside-MRAM logic regions and the resulting device are provided. Embodiments include providing an embedded MRAIVI layout with near-active-MRAM-cell periphery logic and far-outside-MRAM logic regions; forming a MTJ structure within the layout based on minimum space and distance rules relative to a first metal layer, a second metal layer, and/or both the first and second metal layers; forming a high-density MTJ dummy structure in the near-active-MRAM-cell periphery logic region based on second minimum space and distance rules relative to a first metal layer, a second metal layer, and/or both the first metal layer and the second metal layer; and forming a low-density MTJ dummy structure in the far-outside-MRAM logic region based on third minimum space and distance rules relative to a first metal layer, a second metal layer, and/or both the first metal layer and the second metal layer.
Bibliography:Application Number: US201715858655