DENSITY-CONTROLLABLE DUMMY FILL STRATEGY FOR NEAR-MRAM PERIPHERY AND FAR-OUTSIDE-MRAM LOGIC REGIONS FOR EMBEDDED MRAM TECHNOLOGY AND METHOD FOR PRODUCING THE SAME

• Main Authors: ZHANG, Liying, YI, Wanbing, SHUM, Danny Pak-Chum, LI, Pinghui, CHAN, Darin, ZHOU, Haiqing, ZHU, Ming
• Format: Patent
• Language: English
• Published: 04.07.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Methods of forming a MTJ dummy fill gradient across near-active-MRAM-cell periphery and far-outside-MRAM logic regions and the resulting device are provided. Embodiments include providing an embedded MRAIVI layout with near-active-MRAM-cell periphery logic and far-outside-MRAM logic regions; forming a MTJ structure within the layout based on minimum space and distance rules relative to a first metal layer, a second metal layer, and/or both the first and second metal layers; forming a high-density MTJ dummy structure in the near-active-MRAM-cell periphery logic region based on second minimum space and distance rules relative to a first metal layer, a second metal layer, and/or both the first metal layer and the second metal layer; and forming a low-density MTJ dummy structure in the far-outside-MRAM logic region based on third minimum space and distance rules relative to a first metal layer, a second metal layer, and/or both the first metal layer and the second metal layer.