Methods and Systems for Writing to Magnetic Memory Devices Utilizing Alternating Current
A method for selectively writing to STT-MRAM using an AC current is provided. The method is performed in a memory device including two or more multilevel magnetic tunnel junctions (MTJs) arranged in series with respect to a single terminal of a transistor, where the two or more multilevel MTJs inclu...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
04.07.2019
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Subjects | |
Online Access | Get full text |
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Summary: | A method for selectively writing to STT-MRAM using an AC current is provided. The method is performed in a memory device including two or more multilevel magnetic tunnel junctions (MTJs) arranged in series with respect to a single terminal of a transistor, where the two or more multilevel MTJs include a first MTJ having a first magnetic characteristic and first electrical characteristic and a second MTJ having a second magnetic characteristic that is distinct from the first magnetic characteristic and a second electrical characteristic. The method includes writing to an MTJ. The writing includes applying a DC current to the two or more MTJs and applying an AC current to the two or more MTJs, where the AC current is adjusted to a frequency that is tuned to a write assist frequency corresponding to the respective MTJ. |
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Bibliography: | Application Number: US201715859256 |