RESISTIVE MEMORY CELL PROGRAMMED BY METAL ALLOY FORMATION AND METHOD OF OPERATING THEREOF

A resistive memory cell includes a barrier layer containing at least one of silicon and germanium, and a metal oxide layer including an oxide of a metal element that provides a reversible chemical reaction under a bidirectional electrical bias at an interface with the barrier material layer. The rev...

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Bibliographic Details
Main Author FUTASE, Takuya
Format Patent
LanguageEnglish
Published 06.06.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A resistive memory cell includes a barrier layer containing at least one of silicon and germanium, and a metal oxide layer including an oxide of a metal element that provides a reversible chemical reaction under a bidirectional electrical bias at an interface with the barrier material layer. The reversible chemical reaction is selected from a silicidation reaction between the barrier material layer and the metal element, a germanidation reaction between the barrier material layer and the metal element, oxidation of the metal element, and reduction of the metal element.
Bibliography:Application Number: US201715833192