INTEGRATED CIRCUIT WITH HALL EFFECT AND ANISOTROPIC MAGNETORESISTIVE (AMR) SENSORS

Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive senso...

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Bibliographic Details
Main Authors French, William David, Lee, Dok Won, Green, Keith Ryan
Format Patent
LanguageEnglish
Published 23.05.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.
Bibliography:Application Number: US201916257410