METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES AND STRUCTURES THEREOF
A method of manufacturing a semiconductor device includes: forming a first mandrel and a second mandrel over a mask layer; depositing a spacer layer over the first mandrel and the second mandrel; forming a line-end cut pattern over the spacer layer between the first mandrel and the second mandrel; d...
Saved in:
Main Authors | , , , , , |
---|---|
Format | Patent |
Language | English |
Published |
23.05.2019
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A method of manufacturing a semiconductor device includes: forming a first mandrel and a second mandrel over a mask layer; depositing a spacer layer over the first mandrel and the second mandrel; forming a line-end cut pattern over the spacer layer between the first mandrel and the second mandrel; depositing a protection layer over the line-end cut pattern; etching the protection layer on the line-end cut pattern; reducing a width of the line-end cut pattern; etching first horizontal portions of the spacer layer with the reduced line-end cut pattern as an etching mask; removing the first mandrel and the second mandrel; and patterning the mask layer using the etched spacer layer and the etched line-end cut pattern as an etch mask. |
---|---|
Bibliography: | Application Number: US201816121343 |