MANUFACTURE METHOD OF POLYSILICON THIN FILM AND POLYSILICON TFT STRUCTURE

• Main Authors: Wu, Yuanchun, Hsu, Yuanjun, Zhou, Wei, Zhang, Liangfen, Lo, Changcheng, Lien, Shuichih, Wong, Man, Kwok, Hoising, Chen, Rongsheng, Zhang, Meng
• Format: Patent
• Language: English
• Published: 02.05.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A polysilicon thin film transistor (TFT) structure includes a substrate, a buffer layer covering the substrate, an island shaped semiconductor layer positioned on the buffer layer, a gate isolation layer covering the island shaped semiconductor layer, a gate positioned on the gate isolation layer, a passivation layer positioned on the gate and the gate isolation layer, and a source and a drain positioned on the passivation layer. The island shaped semiconductor layer is formed with a process that includes forming a polysilicon thin film on the substrate and implementing silicon self-ion implantation to the polysilicon thin film with a dosage and an energy level that prevent the polysilicon thin film from being decrystallized. The silicon self-ion implanted polysilicon thin film is further subjected to photolithography and ion doping to form the island shaped semiconductor layer with ion doping areas.