CMOS IMAGE SENSOR STRUCTURE WITH CROSSTALK IMPROVEMENT

A semiconductor device includes a semiconductor substrate, a device layer over the semiconductor substrate, a first color filter in a top surface of the device layer and adjacent to an edge of the device layer, and a second color filter in the top surface of the device layer. The second color filter...

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Bibliographic Details
Main Authors HSU, Chun-Yuan, CHANG, Hung-Chang, YANG, Szu-Hung
Format Patent
LanguageEnglish
Published 02.05.2019
Subjects
AIRCRAFT
AVIATION
COSMONAUTICS
LIGHTER-THAN AIR AIRCRAFT
PERFORMING OPERATIONS
TRANSPORTING
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Summary:A semiconductor device includes a semiconductor substrate, a device layer over the semiconductor substrate, a first color filter in a top surface of the device layer and adjacent to an edge of the device layer, and a second color filter in the top surface of the device layer. The second color filter has substantially the same thickness and the same color as the first color filter.
Bibliography:Application Number: US201816206763