ACCESS DEVICE AND PHASE CHANGE MEMORY COMBINATION STRUCTURE IN BACKEND OF LINE (BEOL)

A combined semiconductor device is fabricated by forming a first access structure from a mixed ionic electronic conduction (MIEC) material. A first side of a first memory structure is electrically coupled with a first side of the first access structure to form the combination device. A subtractive e...

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Bibliographic Details
Main Authors Virwani, Kumar R, Carta, Fabio, Bruce, Robert, Fraczak, Gloria WingYun, Miyazoe, Hiroyuki
Format Patent
LanguageEnglish
Published 25.04.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A combined semiconductor device is fabricated by forming a first access structure from a mixed ionic electronic conduction (MIEC) material. A first side of a first memory structure is electrically coupled with a first side of the first access structure to form the combination device. A subtractive etching process is applied to the combination device such that a surface of the combination device that is substantially orthogonal to a plane of a substrate of the semiconductor device is within a defined tapering tolerance.
Bibliography:Application Number: US201816227091