WET ETCH CHEMISTRY FOR SELECTIVE SILICON ETCH

For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindranc...

Full description

Saved in:
Bibliographic Details
Main Authors LIN, Shun Wu, WANG, Yu-Wen, YEH, Ming-Hsi, HUANG, Kuo Bin, LIAN, Jian-Jou, YANG, Neng-Jye, CHANG, Shih Min
Format Patent
LanguageEnglish
Published 25.04.2019
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.
Bibliography:Application Number: US201816220507