HYBRID CMOS DEVICE AND MANUFACTURING METHOD THEREOF

• Main Authors: ZHANG, Liangfen, LU, Poyen, CHEN, Changdong, HSU, Yuanjun, LIU, Chuan, WU, Yuanchun, YANG, Boru, IM, Jangsoon
• Format: Patent
• Language: English
• Published: 11.04.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The disclosure provides a hybrid CMOS device and a manufacturing method thereof. The manufacturing method of the hybrid CMOS device according to the disclosure uses a low-temperature polysilicon to prepare an active layer of a PMOS transistor, and simultaneously uses a metal oxide semiconductor to p...