HYBRID CMOS DEVICE AND MANUFACTURING METHOD THEREOF

The disclosure provides a hybrid CMOS device and a manufacturing method thereof. The manufacturing method of the hybrid CMOS device according to the disclosure uses a low-temperature polysilicon to prepare an active layer of a PMOS transistor, and simultaneously uses a metal oxide semiconductor to p...

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Bibliographic Details
Main Authors ZHANG, Liangfen, LU, Poyen, CHEN, Changdong, HSU, Yuanjun, LIU, Chuan, WU, Yuanchun, YANG, Boru, IM, Jangsoon
Format Patent
LanguageEnglish
Published 11.04.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The disclosure provides a hybrid CMOS device and a manufacturing method thereof. The manufacturing method of the hybrid CMOS device according to the disclosure uses a low-temperature polysilicon to prepare an active layer of a PMOS transistor, and simultaneously uses a metal oxide semiconductor to prepare an active layer of an NMOS transistor. The two types of semiconductor materials are used in combination to form a hybrid CMOS device. Compared with the existing method for producing an active layer of the PMOS transistor by using a two-dimensional carbon nanotransister material or an organic semiconductor material, the hybrid CMOS device obtained according to the disclosure has superior electrical properties.
Bibliography:Application Number: US201715744811