HYBRID CMOS DEVICE AND MANUFACTURING METHOD THEREOF

The disclosure provides a hybrid CMOS device and a manufacturing method thereof. The manufacturing method of the hybrid CMOS device according to the disclosure uses a low-temperature polysilicon to prepare an active layer of a PMOS transistor, and simultaneously uses a metal oxide semiconductor to p...

Full description

Saved in:
Bibliographic Details
Main Authors ZHANG, Liangfen, LU, Poyen, CHEN, Changdong, HSU, Yuanjun, LIU, Chuan, WU, Yuanchun, YANG, Boru, IM, Jangsoon
Format Patent
LanguageEnglish
Published 11.04.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

Abstract The disclosure provides a hybrid CMOS device and a manufacturing method thereof. The manufacturing method of the hybrid CMOS device according to the disclosure uses a low-temperature polysilicon to prepare an active layer of a PMOS transistor, and simultaneously uses a metal oxide semiconductor to prepare an active layer of an NMOS transistor. The two types of semiconductor materials are used in combination to form a hybrid CMOS device. Compared with the existing method for producing an active layer of the PMOS transistor by using a two-dimensional carbon nanotransister material or an organic semiconductor material, the hybrid CMOS device obtained according to the disclosure has superior electrical properties.
AbstractList The disclosure provides a hybrid CMOS device and a manufacturing method thereof. The manufacturing method of the hybrid CMOS device according to the disclosure uses a low-temperature polysilicon to prepare an active layer of a PMOS transistor, and simultaneously uses a metal oxide semiconductor to prepare an active layer of an NMOS transistor. The two types of semiconductor materials are used in combination to form a hybrid CMOS device. Compared with the existing method for producing an active layer of the PMOS transistor by using a two-dimensional carbon nanotransister material or an organic semiconductor material, the hybrid CMOS device obtained according to the disclosure has superior electrical properties.
Author ZHANG, Liangfen
LIU, Chuan
YANG, Boru
WU, Yuanchun
IM, Jangsoon
LU, Poyen
CHEN, Changdong
HSU, Yuanjun
Author_xml – fullname: ZHANG, Liangfen
– fullname: LU, Poyen
– fullname: CHEN, Changdong
– fullname: HSU, Yuanjun
– fullname: LIU, Chuan
– fullname: WU, Yuanchun
– fullname: YANG, Boru
– fullname: IM, Jangsoon
BookMark eNrjYmDJy89L5WQw9oh0CvJ0UXD29Q9WcHEN83R2VXD0c1HwdfQLdXN0DgkN8vRzV_B1DfHwd1EI8XANcvV342FgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGloYGlkbGFo6GxsSpAgAtZSmr
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US2019109238A1
GroupedDBID EVB
ID FETCH-epo_espacenet_US2019109238A13
IEDL.DBID EVB
IngestDate Fri Jul 19 15:14:15 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US2019109238A13
Notes Application Number: US201715744811
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190411&DB=EPODOC&CC=US&NR=2019109238A1
ParticipantIDs epo_espacenet_US2019109238A1
PublicationCentury 2000
PublicationDate 20190411
PublicationDateYYYYMMDD 2019-04-11
PublicationDate_xml – month: 04
  year: 2019
  text: 20190411
  day: 11
PublicationDecade 2010
PublicationYear 2019
RelatedCompanies SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR TECHNOLOGY CO
RelatedCompanies_xml – name: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR TECHNOLOGY CO
Score 3.2041345
Snippet The disclosure provides a hybrid CMOS device and a manufacturing method thereof. The manufacturing method of the hybrid CMOS device according to the disclosure...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title HYBRID CMOS DEVICE AND MANUFACTURING METHOD THEREOF
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190411&DB=EPODOC&locale=&CC=US&NR=2019109238A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5KFfWmVfFRZUHJLWiySdMcgqS7G6KQpDRJqaeShAQESYuN-PedDan21Nu-mH3AzDezOzML8GhaVqZndqFmup2rhlEW6phWlloh3KCgpLQyZaBwEI781HhbmIsefG5jYdo8oT9tckTkqAL5vWnl9fr_Eou3vpWbp_wDm1YvXuJwpbOOEd0M5F0-ccQ04hFTGHPSWAlnbZ_2jNrM2EVb6QAVaUs6gIn5RMalrHdBxTuFwynSq5sz6JX1AI7Z9u-1ARwF3ZM3Fjvu25wD9d-lLwxhQRQTLuavTBA35CRww9RzWZJKzwYSiMSPOEl8MRORdwEPnkiYr-Lsy7_NLtN4d6n0Evr1qi6vgBSI3YVpaBmVsWnSMhuZuY4jEbAzW6-uYbiP0s3-7ls4kVX5TqJpQ-g3X9_lHcJtk9-3p_QLIYF8VA
link.rule.ids 230,309,783,888,25578,76884
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFOebTsWPqQFlb0X7tbUPRbokpdOlHVs75tNoSwuCdMNV_Pe9lE33tLeQC5cPuPvlch8BeDT7_URL7ExJNDtVDCPPFEsv-kqBcIOKUtcLUyYKi6Dnx8br3Jw34HObC1PXCf2piyOiRGUo71Wtr1f_j1isjq1cP6Uf2LV88SKHdTfWMaKbgbLLBg4fhyykXUqdeNoNJjVNfcbbjOWirXSAl2xLVtrns4HMS1ntgop3Aodj5FdWp9DIyza06PbvtTYciY3LG5sb6Vufge6_y1gYQkU4JYzPhpQTN2BEuEHsuTSKZWQDETzyQ0Yin0946J3Dg8cj6is4--Jvs4t4urtU_QKa5bLML4FkiN2ZaaiJLnPTpGXWM1MNRyJgJ7ZWXEFnH6fr_eR7aPmRGC1Gw-DtBo4lSfpMVLUDzerrO79F6K3Su_rEfgEd7X9E
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=HYBRID+CMOS+DEVICE+AND+MANUFACTURING+METHOD+THEREOF&rft.inventor=ZHANG%2C+Liangfen&rft.inventor=LU%2C+Poyen&rft.inventor=CHEN%2C+Changdong&rft.inventor=HSU%2C+Yuanjun&rft.inventor=LIU%2C+Chuan&rft.inventor=WU%2C+Yuanchun&rft.inventor=YANG%2C+Boru&rft.inventor=IM%2C+Jangsoon&rft.date=2019-04-11&rft.externalDBID=A1&rft.externalDocID=US2019109238A1