TWO PASS MRAM DUMMY SOLUTION

Methods of fabricating a flexible dummy fill to increase MTJ density are provided. Embodiments include forming a first oxide layer; forming lower interconnect layers in the first oxide layer; forming a nitride layer over the first oxide layer and the lower interconnect layers; forming a second oxide...

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Bibliographic Details
Main Authors LIU, Wenjun, TAN, Juan Boon, HSIEH, Curtis Chun-I, YI, Wanbing, NAYYAR, Neha, BHATKAR, Mahesh
Format Patent
LanguageEnglish
Published 07.03.2019
Subjects
ELECTRICITY
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Summary:Methods of fabricating a flexible dummy fill to increase MTJ density are provided. Embodiments include forming a first oxide layer; forming lower interconnect layers in the first oxide layer; forming a nitride layer over the first oxide layer and the lower interconnect layers; forming a second oxide layer over the nitride layer; forming bottom electrodes through the second oxide layer and the nitride layer contacting a portion of an upper surface of the lower interconnect layers; forming MTJ structures over the bottom electrodes; forming top electrodes over the MTJ structures; and forming upper interconnect layers over one or more of the top electrodes.
Bibliography:Application Number: US201816175216