COMPOSITIONS AND METHODS FOR ETCHING SILICON NITRIDE-CONTAINING SUBSTRATES
Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching me...
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Main Authors | , , , , , , , |
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Format | Patent |
Language | English |
Published |
07.03.2019
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Subjects | |
Online Access | Get full text |
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Summary: | Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching. |
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Bibliography: | Application Number: US201816122940 |