VERTICAL TYPE LIGHT EMITTING DIODE
Disclosed herein is a vertical type light emitting diode having a mesa including a groove. The light emitting diode includes: a support substrate; a first conductivity type semiconductor layer disposed on the support substrate; a mesa including an active layer and a second conductivity type semicond...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
07.02.2019
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Subjects | |
Online Access | Get full text |
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Summary: | Disclosed herein is a vertical type light emitting diode having a mesa including a groove. The light emitting diode includes: a support substrate; a first conductivity type semiconductor layer disposed on the support substrate; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer through the second conductivity type semiconductor layer and the active layer; a first electrode disposed between the second conductivity type semiconductor layer and the support substrate and including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open. |
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Bibliography: | Application Number: US201815872900 |