SPUTTERING TARGET AND METHOD OF MANUFACTURING SPUTTERING TARGET

Provided is a sputtering target having a composition comprising: 5 at % or more and 60 at % or less of Ga, and 0.01 at % or more and 5 at % or less of alkali metal, as metal components; and a Cu balance including inevitable impurities, wherein a concentration of the alkali metal on a surface on a sp...

Full description

Saved in:
Bibliographic Details
Main Authors Io, Kensuke, Shiono, Ichiro, Umemoto, Keita, Zhang, Shoubin
Format Patent
LanguageEnglish
Published 07.02.2019
Subjects
ALLOYS
CASTING
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
FERROUS OR NON-FERROUS ALLOYS
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
MAKING METALLIC POWDER
MANUFACTURE OF ARTICLES FROM METALLIC POWDER
METALLURGY
PERFORMING OPERATIONS
POWDER METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
TRANSPORTING
TREATMENT OF ALLOYS OR NON-FERROUS METALS
WORKING METALLIC POWDER
Online AccessGet full text

Cover

More Information
Summary:Provided is a sputtering target having a composition comprising: 5 at % or more and 60 at % or less of Ga, and 0.01 at % or more and 5 at % or less of alkali metal, as metal components; and a Cu balance including inevitable impurities, wherein a concentration of the alkali metal on a surface on a sputtering surface side is less than 80% of a concentration of the alkali metal inside the target.
Bibliography:Application Number: US201716072602