PROTECTIVE INSULATOR FOR HFET DEVICES

• Main Authors: Kudymov, Alexey, Wang, Xiaohui, Ramdani, Jamal, Liu, Linlin
• Format: Patent
• Language: English
• Published: 24.01.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An HFET includes a first and second semiconductor material. A first composite passivation layer includes a first insulation layer and a first passivation layer, and the first passivation layer is disposed between the first insulation layer and the second semiconductor material. The HFET includes a second passivation layer, where the first insulation layer is disposed between the first passivation layer and the second passivation layer. A gate dielectric is disposed between the second semiconductor material and the first passivation layer. A source electrode and a drain electrode are coupled to the second semiconductor material, and a gate electrode is disposed laterally between the source electrode and the drain electrode. A first gate field plate is disposed between the first passivation layer and the second passivation layer and electrically connected to the gate electrode, and a second gate field plate is disposed above first gate field plate.