PROCESS OF FORMING EPITAXIAL SUBSTRATE HAVING N-POLAR GALLIUM NITRIDE

A process of forming a high electro mobility transistor (HEMT) with a reveres arrangement for the barrier layer and the channel layer thereof is disclosed. The process includes steps of epitaxially growing an oxide layer containing zinc (Zn) on a substrate where the oxide layer showing an O-polar su...

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Bibliographic Details
Main Author Makabe, Isao
Format Patent
LanguageEnglish
Published 24.01.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A process of forming a high electro mobility transistor (HEMT) with a reveres arrangement for the barrier layer and the channel layer thereof is disclosed. The process includes steps of epitaxially growing an oxide layer containing zinc (Zn) on a substrate where the oxide layer showing an O-polar surface; epitaxially growing a semiconductor stack made of nitride semiconductor materials on the oxide layer where the semiconductor stack includes a nitride semiconductor layer, a barrier layer and a channel layer on the oxide layer in this order; attaching a temporal substrate to the semiconductor stack; removing the substrate and the oxide layer from the semiconductor stack; attaching a support substrate to the nitride semiconductor layer; and removing the temporal substrate from the semiconductor stack.
Bibliography:Application Number: US201816041214