Low Temperature Process for Forming Silicon-Containing Thin Layer
The present invention relates to a method for forming a silicon-containing thin layer at a low temperature, and in particular, to a method for forming a silicon-containing thin layer by carrying out atomic layer deposition (ALD) at a low temperature.
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Main Authors | , , , , , , |
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Format | Patent |
Language | English |
Published |
27.12.2018
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention relates to a method for forming a silicon-containing thin layer at a low temperature, and in particular, to a method for forming a silicon-containing thin layer by carrying out atomic layer deposition (ALD) at a low temperature. |
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Bibliography: | Application Number: US201715634241 |