HYBRID PHOTON DEVICE HAVING ETCH STOP LAYER AND METHOD OF FABRICATING THE SAME

Provided are a hybrid photon device including an etch stop layer and a method of manufacturing the hybrid photon device. The hybrid photon device includes: a silicon substrate including a waveguide on a surface thereof; a front etch stop layer and a rear etch stop layer disposed on a surface of the...

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Bibliographic Details
Main Authors CHOI, Byounglyong, JEONG, Byunggil, SHIM, Dongsik
Format Patent
LanguageEnglish
Published 20.12.2018
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:Provided are a hybrid photon device including an etch stop layer and a method of manufacturing the hybrid photon device. The hybrid photon device includes: a silicon substrate including a waveguide on a surface thereof; a front etch stop layer and a rear etch stop layer disposed on a surface of the waveguide, the front and rear etch stop layers formed respectively to either side of the first region in a length direction of the waveguide; and a group III/V light-emitting unit generating light on a region of the silicon substrate between the front and rear etch stop layers.
Bibliography:Application Number: US201715805717