SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE

In a vertical MOSFET having a trench gate structure, a lifetime killer region is provided in a p-type epitaxial layer formed by epitaxial growth. The lifetime killer region includes an electron lifetime killer that causes electrons entering the lifetime killer region to recombine and become extinct....

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Bibliographic Details
Main Authors Tawara, Takeshi, Miyajima, Masaaki, Miyazato, Masaki, Ryo, Mina
Format Patent
LanguageEnglish
Published 13.12.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a vertical MOSFET having a trench gate structure, a lifetime killer region is provided in a p-type epitaxial layer formed by epitaxial growth. The lifetime killer region includes an electron lifetime killer that causes electrons entering the lifetime killer region to recombine and become extinct. As a result, the lifetime killer region decreases the electrons generated at the pn interface of the p-type epitaxial layer and an n-type drift layer and enables a configuration in which electrons are not delivered to the p-type epitaxial layer.
Bibliography:Application Number: US201815988764