SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed o...

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Main Authors Chang, Yun-Tzu, Hsiao, Wei-Ming, Lai, Kuo-Chih, Chou, Shih-Min, Lu, Yang-Ju, Chen, Yen-Chen, Chen, Wei-Ning, Yang, Chun-Yao, Hsu, Chia-Chang
Format Patent
LanguageEnglish
Published 15.11.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.
Bibliography:Application Number: US201816044581